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Prof. Dr. rer. nat. Martin Jogwich

Faculty of Electrical Engineering and Media Technology

Lecturers

Lecturer

publications

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Lecture

M. Frank
A. Hardtke
Martin Jogwich
et al.

12th European Conference on Controlled Fusion and Plasma Physics.

Budapest, Ungarn

02.09.1985 (1985)

Electrical Engineering and Media Technology

Lecture

Martin Jogwich
et al.

VUV-Spektroskopie hochangeregter ArI-Linien einer EZR-Entladung.

In: DPG-Frühjahrstagung, Verhandlungen DPG 3/1987 P-22.7

Göttingen

16.03.1987 (1987)

Electrical Engineering and Media Technology

Journal article

Martin Jogwich
et al.

Selective Population of the Ar I 6d[3/2]0 Level by Two Electron Transfer from Copper.

In: Europhysics Conference Abstracts vol. 12

(1988)

Electrical Engineering and Media Technology

Lecture

Martin Jogwich
et al.

Zweielektronentransfer zwischen Cu und Ar2+ in einer EZR-Entladung.

In: DPG-Frühjahrstagung, Verhandlungen DPG 1/1988 P-11.6

Düsseldorf

01.-03.03.1988 (1988)

Electrical Engineering and Media Technology

Contribution

Martin Jogwich
et al.

Selective Population of the Ar I 6d[3/2]0 Level by Two Electron Transfer from Copper. Posterpräsentation.

In: Proceedings of the International Conference on Phenomena in Ionized Gases (ICPIG) XIX. Contributed Papers 2 pg. 428

(1989)

Electrical Engineering and Media Technology

Contribution

Martin Jogwich

Selektive Besetzung hochangeregter ArI-Zustände durch einen Zweielektronentransfer zwischen Cu und ArIII in einer EZR-Mikrowellenentladung.

In: SFB-Report Plasmaphysik 89-05-185.

Bochum, Jülich

(1989)

Electrical Engineering and Media Technology

Journal article

Martin Jogwich
B. Huber
K. Wiesemann

A Spectroscopic Study of Double Electron Transfer from Cu to ArIII in an ECR-Microwave Discharge.

In: Zeitschrift für Physik D: Atoms, Molecules and Clusters vol. 17 pg. 171-179

(1990)

show abstract

We present spectroscopic measurements of rate coefficients for the population of the ArI 6d[3/2] o and 8s[3/2] o states by two electron transfer from sputtered Cu to Ar2+ in an ECR microwave discharge. Rate coefficients are obtained from absolutely measured line intensities using a modified corona model. Though the binding energies of these states differ by 8 meV only the probability of populating the 6d level exceeds by a factor of ten that of populating the 8s level. This is attributed to an energy resonance between the two electrons when promoting to their final levels. The cross section for this two electron transfer comes out to be of the order of 10−15 to 10−14 cm2.

Electrical Engineering and Media Technology

Lecture

Martin Jogwich

Bestimmung der Ratenkoeffizienten von Zweielektronen-Transferprozessen zwischen Cu und Ar2+ in einer EZR-Entladung.

In: DPG-Frühjahrstagung/Verhandlungen DPG 3/1990 P-9.1

München

12.-16.03.1990 (1990)

Electrical Engineering and Media Technology

Journal article

C.-J. Lorenzen
C. Carlhoff
U. Hahn
Martin Jogwich

Application of Laser-Induced Emission Spectral Analysis for Industrial Process and Quality Control.

In: Journal of Analytical Atomic Spectrometry vol. 7 pg. 1029-1035

(1992)

DOI: 10.1039/JA9920701029

show abstract

Laser-induced emission spectral analysis (LIESA, a registered trademark of instruments developed by Krupp), better known in the literature as laser microanalysis or laser-induced breakdown spectroscopy, is a suitable method for the direct in-process measurement of elemental concentrations in various solid and liquid materials. This method has been developed recently by Krupp for in-process quality assurance and process control in different industrial branches such as steel production and plant making. As a result several LIESA instruments have already been developed or are under development for marketing. In all cases on-line and in-process elemental analysis of materials at various stages of production yield information on the quality of the material and the fabrication process. The beam of a pulsed high-power laser (irradiance: 1 × 108–5 × 109 W cm–2), focused onto the solid or liquid sample surface in an ambient gas atmosphere of normal pressure (focus area≈ablation area, 0.1–6 mm2), produces a hot bright plasma (early electron temperatures, 20000–30000 K). The emitted plasma light is observed end-on and passes by way of an optical fibre bundle to a spectrometer, where it is detected in the focal plane by means of an optical multichannel analyser with high time resolution (on the microsecond scale). A fast computer evaluates the measured spectra and calculates the element concentrations via calibration procedures. Relative detection limits of between 10 and 100 ppm can be achieved for most of the detectable elements in various matrices (steel, rubber, rock and glass). Procedures are available to convert relative measurements with relative standard deviations of between 1 and 2% into absolute concentration values with relative accuracies of about 3%.

Electrical Engineering and Media Technology

Contribution

K. Fu
Martin Jogwich
et al.

Atomic Transition Probabilities and Lifetimes for the Cu I System.

In: Bericht 30-A7-93 des Sonderforschungsbereichs "Physikalische Grundlagen der Niedertemperaturplasmen".

(1993)

Electrical Engineering and Media Technology

Journal article

C. Carlhoff
Martin Jogwich
C.-J. Lorenzen

Analyse von Kunststoffen durch laserinduzierte Emissionsspektralanalyse.

In: Laser-Praxis vol. 10 pg. 86-88

(1994)

Electrical Engineering and Media Technology

Journal article

K. Fu
Martin Jogwich
M. Knebel
K. Wiesemann

Atomic Transition Probabilities and Lifetimes for the Cu I System.

In: Atomic Data and Nuclear Data Tables vol. 61 pg. 1-30

(1995)

DOI: 10.1016/S0092-640X(95)90009-8

show abstract

Measured and calculated transition probabilities, oscillator strengths, and wavelengths for Cu I atomic transitions and measured and calculated lifetimes of Cu I states are tabulated. Data published from 1957 to mid-1994 are covered in this compilation.